the pulse of the future directed energy incorporated FPS-4N dc to 28mhz pulse width agile gate drive module the FPS-4N gate drive module is designed for use with de-series power mosfets. it was devel- oped as a design tool to support the system de- signer in the evaluation of and prototyping using the de-series devices. it provides gate drive and mosfet mounting, thereby freeing the designer to focus on the specifics of the system under develop- ment. by utilizing design techniques developed by dei, the FPS-4N can drive de-150 and de-275 series mosfets at frequencies to 28mhz with pulse width agility from <15ns to continuous, and rise times of 3- 4ns. the FPS-4N can also drive the de-375 at fre- quencies to 18mhz, with comparable pulse width and switching speeds. provisions for heat sinking the mosfet and a strip- line drain and source interconnect topology allow the user to easily incorporate the FPS-4N driver and power mosfet as a pulse width agile module in high speed, high power circuits such as class d and class e rf generators, high speed pulsed voltage sources and pulsed current sources. the control gate input to the fps4n is a ttl into 5 0? , high true logic signal. this drive is a voltage source that is level shifted to +15v before being ap- plied to the de-series gate. therefore gate drive will follow the input control gate in time, with a delay (td) as specified in the specifications section of this data sheet. the output section provides for drain and source con- nections (sd1 and sd2) in a stripline topology. mounting holes are provided at the four corners so that the pcb may be secured to a chassis, and there are two holes on either side of the device for high power mounting of the de-series device to a heat sink. leds are used as support power indicators. a detailed discussion of the design and topology of the FPS-4N is addressed in the ?gate driver design for switch mode applications? technical note, avail- able for download from dei?s web site at http://www. directedenergy.com. for users interested in designing this circuit into their systems, the circuit board layout and fabrication package is available from dei. con- tact dei for more information. the FPS-4N is provided as a fully assembled and tested module. the de-series mosfet is sold sepa- rately. ? high frequency gate drive module for de-series mosfets ? dc to 28mhz frequency ? <15ns to dc pulse width ? 3ns typical rise time ? 30ns throughput delay
the pulse of the future directed energy, inc. an ixys company 2401 research blvd., suite 108 fort collins, co usa 80526 970-493-1901 fax: 970-493-1903 email: deiinfo@directedenergy.com web: http://www.directedenergy.com parameter value output gate drive rise time (10% to 90%) 3ns 1ns max. pulse recurrence frequency 28mhz driving a 2000pf load (typical de-275 c iss ) 19mhz driving a 3500pf load (typical de-375 c iss ) pulse width <15ns to dc throughput delay 30ns typical jitter <50ps 1st sigma inputs input control gate ttl into 50 ? support power +5vdc @ <0.1a +15vdc @ 0.5a (no gate drive), ~2.5a @ 13.56mhz, 2000pf load (1) general dimensions 6.0? (15.2cm) l x 2.5? (6.35 cm) w cooling 50-100cfm air flow required, depend- ing upon frequency s pecifications s ubject t o c hange w ithout n otice specifications (all specifications measured into a 2000pf load (typical de-275 mosfet input capacitance) (1) +15vdc support power requirements are highly dependent on frequency and load capacitance. the +15vdc power requirements are approximated by the formula 0.5a + cv 2 f, where c is the input capacitance (c iss ) of the mosfet being driven, v is the gate drive voltage (typically 15v), and f is the pulse repetition frequency. 3ns typical rise time, 2000pf load (2.5v/div vert. scale, 10ns/div horiz. scale) <15ns min. pulse width, 2000pf load (2v/div vert. scale, 25ns/div horiz. scale) 28mhz max. frequency, 2000pf load (2v/div vert. scale, 50ns/div horiz. scale) doc #9200-0219 rev 1 ? 2000, directed energy, inc. FPS-4N mechanical layout and mounting hole locations
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